Transcend MTE250S 4TB - M.2 2280, PCIe Gen4 x4 NVMe
Transcend MTE250S 4TB TS4TMTE250S adalah SSD (Solid State Drive) berkapasitas 4 TB dengan dukungan S.M.A.R.T., Advanced Garbage Collection, RAID Engine, LDPC Coding, heatsink Graphene, serta dilengkapi DRAM untuk performa tinggi.
Dijual oleh
Yolori Mall
Transcend MTE250S 4TB TS4TMTE250S adalah SSD (Solid State Drive) yang dilengkapi teknologi S.M.A.R.T., Advanced Garbage Collection, RAID Engine, dan LDPC Coding untuk meningkatkan keandalan dan efisiensi penyimpanan. SSD ini juga memiliki heatsink berbahan Graphene, dengan dimensi double‑sided 80 mm x 22 mm x 3,77 mm dan berat hanya 10 g. Produk ini telah memenuhi standar sertifikasi CE, UKCA, FCC, BSMI, KC, dan RCM. Dilengkapi dengan DRAM, SSD ini kompatibel dengan Microsoft Windows 7 atau yang lebih baru serta Linux Kernel 2.6.31 atau yang lebih baru. Endurance tercatat 3.120 TBW, menggunakan 3D NAND flash, berform factor M.2 2280, dan berinterface NVMe PCIe Gen4 x4. Umur pakai ditunjukkan dengan MTBF 3.000.000 jam dan DWPD 0,43 (5 tahun). Suhu operasi 0 °C ~ 70 °C, konsumsi daya 3,3 V±5 %, serta kecepatan baca/tulis berurutan hingga 7.500 MB/s dan 6.700 MB/s, random read (4K) hingga 540.000 IOPS, random write (4K) hingga 440.000 IOPS, dengan kapasitas penyimpanan 4 TB. Transcend Indonesia memberikan garansi resmi selama 60 bulan untuk produk ini.
Garansi
- Warranty Months
- 60
- Warranty Type
- Transcend Indonesia Official Warranty
Jaminan
- Stock Status
- Tersedia
Spesifikasi Teknis
- Endurance (TBW)
- 3120 TBW
- Form Factor
- M.2 2280
- Cache
- DRAM
- Lifespan
- Reliability (MTBF):3,000,000 hour(s) Reliability (DWPD):0.43 (5 yrs)
- Interface
- NVMe PCIe Gen4 x4
- Storage Capacity
- 4 TB
- Flash NAND
- 3D NAND flash
- Read Write Performance
- Sequential Read:Up to 7,500 MB/s Sequential Write:Up to 6,700 MB/s Random Read (4K):Up to 540,000 IOPS Random Write (4K):Up to 440,000 IOPS
- Compatibility
- Microsoft Windows 7 or later, Linux Kernel 2.6.31 or later
- Cooling
- Graphene heatsink
- Operating Temperature
- 0°C (32°F) ~ 70°C (158°F)
- Certification
- CE, UKCA, FCC, BSMI, KC, RCM
- Power Consumption
- 3.3V±5%
- Features
- S.M.A.R.T.:Yes Advanced Garbage Collection:Yes RAID Engine:Yes LDPC Coding:Yes
- Dimensions
- Double-sided: 80 mm x 22 mm x 3.77 mm
- Weight
- 10 g
Bandingkan dengan produk sejenis
Pilihan lain pada kategori yang sama dengan harga berdekatan.
| Sedang dilihatTranscendTranscend MTE250S 4TB - M.2 2280, PCIe Gen4 x4 NVMe |  Sedang dilihatSamsungSamsung 990 EVO Plus 4TB - M.2 2280, PCIe Gen4 x4 / Gen5 x2 NVMe, V-NAND TLC |  Sedang dilihatSamsungSamsung 990 PRO 4TB - M.2 2280, PCIe Gen4 x4 NVMe, V-NAND TLC |  Sedang dilihatSamsungSamsung 990 PRO 4TB Heatsink - M.2 2280, PCIe Gen4 x4 NVMe, V-NAND TLC | |
|---|---|---|---|---|
| Harga | Rp 17.589.000 | Rp 17.295.000 | Rp 19.079.000 | Rp 19.729.000 |
| Garansi | ||||
| Warranty Months | 60 | 60 | 60 | 60 |
| Warranty Type | Transcend Indonesia Official Warranty | • Garansi Resmi Samsung Indonesia • 5 Tahun Limited Warranty • Berakhir bila batas TBW tercapai lebih dulu | Samsung Indonesia Official Warranty | Samsung Indonesia Official Warranty |
| Jaminan | ||||
| Stock Status | Tersedia | Tersedia | Tersedia | Tersedia |
| Spesifikasi Teknis | ||||
| Encryption | — | — | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive) | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive) |
| Endurance (TBW) | 3120 TBW | — | — | — |
| Form Factor | M.2 2280 | M.2 2280 | M.2 (2280) | M.2 (2280) |
| Cache | DRAM | — | Samsung 4GB Low Power DDR4 SDRAM | Samsung 4GB Low Power DDR4 SDRAM |
| Bundled Software | — | — | Magician Software for SSD management | Magician Software for SSD management |
| Lifespan | Reliability (MTBF):3,000,000 hour(s) Reliability (DWPD):0.43 (5 yrs) | — | 1.5 Million Hours | 1.5 Million Hours |
| Interface | NVMe PCIe Gen4 x4 | PCIe Gen 4.0 x4 / PCIe Gen 5.0 x2, NVMe 2.0 | • PCIe Gen 4.0 x4 • NVMe 2.0 | • PCIe Gen 4.0 x4 • NVMe 2.0 |
| Storage Capacity | 4 TB | 4000 GB | 4 TB | 4 TB |
| Flash NAND | 3D NAND flash | Samsung V-NAND 3-bit TLC (generasi ke-8) | Samsung V-NAND TLC | Samsung V-NAND TLC |
| Read Write Performance | Sequential Read:Up to 7,500 MB/s Sequential Write:Up to 6,700 MB/s Random Read (4K):Up to 540,000 IOPS Random Write (4K):Up to 440,000 IOPS | • Baca sekuensial hingga 7250 MB/s, tulis sekuensial hingga 6300 MB/s • baca acak hingga 1.050.000 IOPS, tulis acak hingga 1.400.000 IOPS (QD32) • ketahanan 2.400 TBW | Sequential Read:Up to 7,450 MB/s Sequential Write:Up to 6,900 MB/s Random Read (4KB, QD32):Up to 1,600,000 IOPS Random Write (4KB, QD32):Up to 1,550,000 IOPS Random Read (4KB, QD1):Up to 22,000 IOPS Random Write (4KB, QD1):Up to 80,000 IOPS | Sequential Read:Up to 7,450 MB/s Sequential Write:Up to 6,900 MB/s Random Read (4KB, QD32):Up to 1,600,000 IOPS Random Write (4KB, QD32):Up to 1,550,000 IOPS Random Read (4KB, QD1):Up to 22,000 IOPS Random Write (4KB, QD1):Up to 80,000 IOPS |
| Compatibility | Microsoft Windows 7 or later, Linux Kernel 2.6.31 or later | — | — | — |
| Chipset | — | — | Samsung in-house Controller | Samsung in-house Controller |
| Cooling | Graphene heatsink | — | — | — |
| Operating Temperature | 0°C (32°F) ~ 70°C (158°F) | — | 0 - 70 ℃ | 0 - 70 ℃ |
| Certification | CE, UKCA, FCC, BSMI, KC, RCM | — | — | — |
| Power Consumption | 3.3V±5% | — | Average Power Consumption (system level): • Average: 6.5 W • Maximum: 8.6 W (Burst mode) Power consumption (Idle):Max. 55 mW Allowable Voltage:3.3 V ± 5 % | Average Power Consumption (system level): • Average: 6.5 W • Maximum: 8.6 W (Burst mode) Power consumption (Idle):Max. 55 mW Allowable Voltage:3.3 V ± 5 % |
| Features | S.M.A.R.T.:Yes Advanced Garbage Collection:Yes RAID Engine:Yes LDPC Coding:Yes | — | Application:Client PCs, Game Consoles TRIM Support:Supported S.M.A.R.T Support:Supported GC (Garbage Collection):Auto Garbage Collection Algorithm WWN Support:Not supported Device Sleep Mode Support:Yes Shock:1,500 G & 0.5 ms (Half sine) | Application:Client PCs, Game Consoles TRIM Support:Supported S.M.A.R.T Support:Supported GC (Garbage Collection):Auto Garbage Collection Algorithm WWN Support:Not supported Device Sleep Mode Support:Yes Shock:1,500 G & 0.5 ms (Half sine) |
| Dimensions | Double-sided: 80 mm x 22 mm x 3.77 mm | 80 × 22 mm (M.2 2280) | 80 x 22 x 2.3 mm | 80.15 x 25 x 8.88 mm (with heatsink) |
| Weight | 10 g | — | 9.0 g | 28.0 g |
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